Text preview for : 2sc3356.pdf part of LGE 2sc3356 . Electronic Components Datasheets Active components Transistors LGE 2sc3356.pdf
Back to : 2sc3356.pdf | Home
2SC3356
SOT-23-3L Transistor(NPN)
1. BASE SOT-23-3L
2. EMITTER
2.92
3. COLLECTOR
0.35
1.17
Features
2.80 1.60
Low noise amplifier at VHF, UHF and CATV band.
Low Noise and High Gain
High Power Gain 0.15
1.90
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector- Base Voltage 20 V
VCEO Collector-Emitter Voltage 12 V
VEBO Emitter-Base Voltage 3 V
IC Collector Current -Continuous 0.1 A
PC Collector Power Dissipation 0.25 W
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=10A, IE=0 20 V
Collector-emitter breakdown voltage V(BR)CEO IC= 1mA, IB=0 12 V
Collector cut-off current ICBO VCB=10V, IE=0 1 A
Emitter cut-off current IEBO VEB=1V, IC=0 1 A
250
*
DC current gain hFE VCE=10V, IC= 20mA 50
Transition frequency fT VCE=10V, IC= 20mA 7 GHz
Noise figure NF VCE=10V, IC= 7mA, f = 1GHz 2 dB
*
pulse test: pulse width350s, Duty cycle2%
CLASSIFICATION OF hFE
Marking R23 R24 R25
Rank Q R S
Range 50-100 80-160 125-250
2SC3356
SOT-23-3L Transistor(NPN)