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Preliminary Technical Information

PolarHVTMHiPerFET IXFP 8N50PM VDSS = 500 V
Power MOSFET ID25 = 4.4 A
(Electrically Isolated Tab) RDS(on) 0.8
trr 200 ns
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode

OVERMOLDED TO-220
Symbol Test Conditions Maximum Ratings
(IXTP...M) OUTLINE
VDSS TJ = 25