Text preview for : umh1n.pdf part of HT Semiconductor umh1n . Electronic Components Datasheets Active components Transistors HT Semiconductor umh1n.pdf
Back to : umh1n.pdf | Home
UMH1N
General purpose transistors (dual transistors)
SOT-363
FEATURES
Two DTC124E chip in a package
1
Mounting possible with SOT-363 automatic mounting machines.
Transistor elements are independent, eliminating interference.
Mounting cost and area be cut in half.
Marking: H1
Equivalent circuit
Absolute maximum ratings(Ta=25)
Parameter Symbol Limits Unit
Supply voltage VCC 50 V
Input voltage VIN -10~40 V
IO 30
Output current mA
IC(MAX) 100
Power dissipation Pd 150 mW
Junction temperature Tj 150
Storage temperature Tstg -55~150
Electrical characteristics (Ta=25)
Parameter Symbol Min Typ Max Unit Conditions
VI(off) 0.5 VCC=5V, IO=100A
Input voltage V
VI(on) 3 VO=0.2V, IO=5mA
Output voltage VO(on) 0.1 0.3 V IO/II=10mA/0.5mA
Input current II 0.36 mA VI=5V
Output current IO(off) 0.5 A VCC=50V, VI=0
DC current gain GI 56 VO=5V, IO=5mA
Input resistance R1 15.4 22 28.6 K -
Resistance ratio R2/R1 0.8 1 1.2 -
Transition frequency fT 250 MHz VCE=10V, IE=5mA, f=100MHz
1
JinYu www.htsemi.com
semiconductor
Date:2011/ 05