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BSP110
N-channel enhancement mode field-effect transistor
Rev. 03 -- 26 July 2000 Product specification

1. Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOSTM1 technology.

Product availability:
BSP110 in SOT223.

2. Features
s TrenchMOSTM technology
s Very fast switching
s Logic level compatible
s Surface mount package.

3. Applications
s Relay driver
c
s High speed line driver
c

s Logic level translator.

4. Pinning information
Table 1: Pinning - SOT223, simplified outline and symbol
Pin Description Simplified outline Symbol
1 gate (g)
4 d
2 drain (d)
3 source (s)
4 drain (d) g

03ab45
03ab30
1 2 3 s

SOT223 N-channel MOSFET

1. TrenchMOS is a trademark of Royal Philips Electronics.
Philips Semiconductors BSP110
N-channel enhancement mode field-effect transistor

5. Quick reference data
Table 2: Quick reference data
Symbol Parameter Conditions Typ Max Unit
VDS drain-source voltage (DC) Tj = 25 to 150