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STB18N20
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
PRELIMINARY DATA
TYPE V DSS R DS(on) ID
ST B18N20 200 V < 0.18 18 A

s TYPICAL RDS(on) = 0.145
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
s LOW GATE CHARGE
s VERY HIGH CURRENT CAPABILITY 3 3
12 1
s APPLICATION ORIENTED
CHARACTERIZATION
s THROUGH-HOLE I2PAK (TO-262) POWER I2PAK D2PAK
PACKAGE IN TUBE (SUFFIX "-1") TO-262 TO-263
s SURFACE-MOUNTING D2PACK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX)
OR IN TAPE & REEL (SUFFIX "T4")

APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING INTERNAL SCHEMATIC DIAGRAM
s SOLENOID AND RELAY DRIVERS
s REGULATORS
s DC-DC & DC-AC CONVERTERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)

ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Uni t
V DS Drain-source Voltage (V GS = 0) 200 V
VDGR Drain- gate Voltage (R GS = 20 k) 200 V
V GS Gate-source Voltage