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CEP12P10/CEB12P10
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-100V, -11A, RDS(ON) =315m @VGS = -10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
D
Lead free product is acquired.
TO-220 & TO-263 package.
D
G
G
G D
S S
CEB SERIES CEP SERIES
TO-263(DD-PAK) TO-220 S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter Symbol Limit Units
Drain-Source Voltage VDS -100 V
Gate-Source Voltage VGS