Text preview for : ktc2874.pdf part of KEC ktc2874 . Electronic Components Datasheets Active components Transistors KEC ktc2874.pdf
Back to : ktc2874.pdf | Home
SEMICONDUCTOR KTC2874
SILICON NPN TRANSISTOR
TECHNICAL DATA EPITAXIAL PLANAR TYPE
FOR MUTING AND SWITCHING APPLICATION.
FEATURES B C
High Emitter-Base Voltage : VEBO=25V(Min.)
High Reverse hFE
A
: Reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA)
Low on Resistance : RON=1 (Typ.), (IB=5mA) DIM MILLIMETERS
D A 4.7 MAX
B 5.1 MAX
G
E
d C 4.1 MAX
L
d 0.45
D 0.55 MAX
E 0.8
MAXIMUM RATING (Ta=25 ) G 1.8
L 12.7 MIN
CHARACTERISTIC SYMBOL RATING UNIT P 1.27
P P T 0.45
Collector-Base Voltage VCBO 50 V
Collector-Emitter Voltage VCEO 20 V 1 2 3
T
1. EMITTER
Emitter-Base Voltage VEBO 25 V 2. COLLECTOR
3. BASE
Collector Current IC 300 mA
Base Current IB 60 mA
Collector Power Dissipation PC 625 mW TO-92
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=50V, IE=0 - - 0.1 A
Emitter Cut-off Current IEBO VEB=25V, IC=0 - - 0.1 A
DC Current Gain (Note) hFE * VCE=2V, IC=4mA 200 - 1200
Collector-Emitter Saturation Voltage VCE(sat) IC=30mA, IB=3mA - 0.042 0.1 V
Base-Emitter Voltage VBE VCE=2V, IC=4mA - 0.61 - V
Transition Frequency fT VCE=6V, IC=4mA - 30 - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 4.8 7 pF
OUTPUT
Turn-on Time tON - 160 -
INPUT 4k
Switching
1k
10V
Storage Time tstg - 500 - nS
Time
3k
50
1