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ADVANCE TECHNICAL INFORMATION
High Voltage, High Gain IXBH 28N170A VCES = 1700 V
BIMOSFET Monolithic TM
IXBT 28N170A IC25 = 30 A
Bipolar MOS Transistor VCE(sat) = 6.0 V
tfi = 50 ns
Symbol Test Conditions Maximum Ratings TO-268 (IXBT)
VCES TJ = 25