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AP4435GM
RoHS-compliant Product
Advanced Power P-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
Simple Drive Requirement D
BVDSS -30V
D
Low On-resistance D RDS(ON) 20m
D
Fast Switching Characteristic ID -9A
G
S
S
SO-8 S
Description
D
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness. G
S
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
Absolute Maximum Ratings
Symbol Parameter Rating Units
VDS Drain-Source Voltage - 30 V
VGS Gate-Source Voltage + 20 V
3
ID@TA=25 Continuous Drain Current -9 A
3
ID@TA=70 Continuous Drain Current -7.3 A
1
IDM Pulsed Drain Current -50 A
PD@TA=25 Total Power Dissipation 2.5 W
Linear Derating Factor 0.02 W/
TSTG Storage Temperature Range -55 to 150
TJ Operating Junction Temperature Range -55 to 150
Thermal Data
Symbol Parameter Value Unit
3
Rthj-a Maximum Thermal Resistance, Junction-ambient 50 /W
Data and specifications subject to change without notice 1
200811216
AP4435GM
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -30 - - V
2
RDS(ON) Static Drain-Source On-Resistance VGS=-10V, ID=-7A - - 20 m
VGS=-4.5V, ID=-5A - - 32 m
VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V
gfs Forward Transconductance VDS=-10V, ID=-7A - 16 - S
IDSS Drain-Source Leakage Current VDS=-30V, VGS=0V - - -1 uA
o
Drain-Source Leakage Current (T j=70 C) VDS=-24V, VGS=0V - - -25 uA
IGSS Gate-Source Leakage VGS=+20V - - +100 nA
2
Qg Total Gate Charge ID=-7A - 18 29 nC
Qgs Gate-Source Charge VDS=-24V - 3 - nC
Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 10 - nC
2
td(on) Turn-on Delay Time VDS=-15V - 8 - ns
tr Rise Time ID=-1A - 6.6 - ns
td(off) Turn-off Delay Time RG=3.3,VGS=-10V - 44 - ns
tf Fall Time RD=15 - 34 - ns
Ciss Input Capacitance VGS=0V - 1175 1690 pF
Coss Output Capacitance VDS=-25V - 195 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 190 - pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
2
VSD Forward On Voltage IS=-2.1A, VGS=0V - - -1.2 V
2
trr Reverse Recovery Time IS=-7A, VGS=0V, - 28 - ns
Qrr Reverse Recovery Charge dI/dt=100A/