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SEMICONDUCTOR KU048N03D
TECHNICAL DATA N-Ch Trench MOSFET
General Description
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
A K DIM MILLIMETERS
characteristics. It is mainly suitable for DC/DC Converter. C D L
A _
6.60 + 0.20
B _
6.10 + 0.20
C _
5.34 + 0.30
D _
0.70 + 0.20
B E _
2.70 + 0.15
FEATURES F _
2.30 + 0.10
G 0.96 MAX
VDSS=30V, ID=79A. H 0.90 MAX
H
J J _
1.80 + 0.20
Low Drain to Source On-state Resistance. E
_
G N K 2.30 + 0.10
: RDS(ON)=4.8m (Max.) @ VGS=10V L _
0.50 + 0.10
F F M M _
0.50 + 0.10
: RDS(ON)=6.5m (Max.) @ VGS=4.5V N 0.70 MIN
O 0.1 MAX
1 2 3
1. GATE
2. DRAIN
3. SOURCE
O
MAXIMUM RATING (Ta=25 Unless otherwise Noted)
CHARACTERISTIC SYMBOL RATING UNIT DPAK (1)
Drain to Source Voltage VDSS 30 V
Gate to Source Voltage VGSS 20 V Marking
DC@TC=25 (Note1) ID 84
Drain Current A
Pulsed (Note2) IDP 336
Single Pulsed Avalanche Energy (Note3) EAS 124 mJ
Type Name
@TC=25 (Note1) 60 KU048N03
Drain Power Dissipation PD W D Lot No
@Ta=25 (Note2) 3.8
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Thermal Resistance, Junction to Case (Note1) RthJC 2.1 /W
Thermal Resistance, Junction to Ambient (Note2) RthJA 40 /W
Note 1) RthJC means that the infinite heat sink is mounted.
Note 2) Surface Mounted on 1 1 Pad of 2 oz copper.
Note 3) L=18 H, IAS=84A, VDD=15V, VGS=10V, Starting Tj=25
PIN CONNECTION (TOP VIEW)
D 2
2
1 3
1 3
G S
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KU048N03D
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain to Source Breakdown Voltage BVDSS VGS=0V, ID=250 A 30 - - V
Drain Cut-off Current IDSS VGS=0V, VDS=30V - - 1 A
Gate to Source Leakage Current IGSS VGS= 20V, VDS=0V - - 100 nA
Gate to Source Threshold Voltage Vth VDS=VGS, ID=250 A 1.0 - 3.0 V
VGS=10V, ID=30A (Note4) - 3.0 4.8
Drain to Source On Resistance RDS(ON) m
VGS=4.5V, ID=30A (Note4) - 4.0 6.5
Forward Transconductance gfs VDS=5V, ID=30A (Note4) - 75 - S
Dynamic
Input Capacitance Ciss - 2772 -
Ouput Capacitance Coss VDS=15V, f=1MHz, VGS=0V - 550 - pF
Reverse Transfer Capacitance Crss - 398 -
Gate Resistance Rg f=1MHz - 3.5 -
VGS=10V Qg - 64.5 -
Total Gate Charge
VGS=4.5V Qg - 32.2 -
VDS=15V, VGS=10V, ID=30A (Note4) nC
Gate to Source Charge Qgs - 8.2 -
Gate to Drain Charge Qgd - 14.7 -
Turn-On Delay Time td(on) - 11.6 -
Turn-On Rise Time tr VDD=15V, VGS=10V - 16.4 -
ns
Turn-Off Delay Time td(off) ID=30A, RG=1.6 (Note4) - 57.8 -
Turn-Off Fall Time tf - 19.8 -
Source to Drain Diode Ratings
Source to Drain Forward Voltage VSD VGS=0V, IS=30A (Note4) - 0.8 1.2 V
Reverse Recovery time trr IS=30A, dI/dt=100A/ - 26.7 - ns
Reverse Recovered charge Qrr IS=30A, dI/dt=100A/ - 17.6 - nC
Note 4) Pulse Test : Pulse width <300 , Duty cycle < 2%
2010. 6. 17 Revision No : 0 2/4
KU048N03D
2010. 6. 17 Revision No : 0 3/4
KU048N03D
2010. 6. 17 Revision No : 0 4/4