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DISCRETE SEMICONDUCTORS
DATA SHEET
BFG198
NPN 8 GHz wideband transistor
Product specification 1995 Sep 12
File under Discrete Semiconductors, SC14
Philips Semiconductors Product specification
NPN 8 GHz wideband transistor BFG198
DESCRIPTION PINNING
NPN planar epitaxial transistor in a PIN DESCRIPTION
plastic SOT223 envelope, intended age 4
1 emitter
for wideband amplifier applications.
The device features a high gain and 2 base
excellent output voltage capabilities. 3 emitter
4 collector
1 2 3
Top view MSB002 - 1
Fig.1 SOT223.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCBO collector-base voltage open emitter - - 20 V
VCEO collector-emitter voltage open base - - 10 V
IC DC collector current - - 100 mA
Ptot total power dissipation up to Ts = 135