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KTC4373


TRANSISTOR (NPN) SOT-89-3L


FEATURES
Small Flat Package 1. BASE

High Voltage Application
2. COLLECTOR
High Voltage
High Transition Frequency 3. EMITTER




MAXIMUM RATINGS (Ta=25 unless otherwise noted)

Symbol Parameter Value Unit
VCBO Collector-Base Voltage 120 V
VCEO Collector-Emitter Voltage 120 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current 800 mA
PC Collector Power Dissipation 500 mW
RJA Thermal Resistance From Junction To Ambient 250 /W
Tj Junction Temperature 150
Tstg Storage Temperature -55~+150


ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)

Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC= 1mA,IE=0 120 V
Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=0 120 V
Emitter-base breakdown voltage V(BR)EBO IE=1mA,IC=0 5 V
Collector cut-off current ICBO VCB=120V,IE=0 100 nA
Emitter cut-off current IEBO VEB=5V,IC=0 100 nA
DC current gain hFE VCE=5V, IC=100mA 80 240
Collector-emitter saturation voltage VCE(sat) IC=500mA,IB=50mA 1 V
Base-emitter voltage VBE VCE=5V, IC=500mA 1 V
Collector output capacitance Cob VCB=10V,IE=0, f=1MHz 30 pF
Transition frequency fT VCE=5V,IC= 500mA 120 MHz


CLASSIFICATION OF hFE
RANK O Y
RANGE 80