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Philips Semiconductors Product specification

PowerMOS transistor BUK482-200A

GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT
field-effect power transistor in a
plastic envelope suitable for surface VDS Drain-source voltage 200 V
mounting featuring high avalanche ID Drain current (DC) 2.0 A
energy capability, stable blocking Ptot Total power dissipation 8.3 W
voltage, fast switching and high RDS(ON) Drain-source on-state resistance 0.9
thermal cycling performance.
Intended for use in Switched Mode
Power Supplies (SMPS) and general
purpose switching applications.

PINNING - SOT223 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION 4 d

1 gate
2 drain
g
3 source

4 drain (tab)
1 2 3 s

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS Drain-source voltage - 200 V
VDGR Drain-gate voltage RGS = 20 k - 200 V