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BF861A; BF861B; BF861C
N-channel junction FETs
Rev. 04 -- 24 September 2004 Product data sheet

1. Product profile

1.1 General description
N-channel symmetrical junction field effect transistors in a SOT23 package.

CAUTION
The device is supplied in an antistatic package. The gate-source input must be protected against
static discharge during transport or handling.

MSC895

1.2 Features
s High transfer admittance s Low input capacitance
s Low feedback capacitance s Low noise.

1.3 Applications
s Preamplifiers for AM tuners in car radios.

1.4 Quick reference data
Table 1: Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage - - 25 V
(DC)
IDSS drain current
BF861A VGS = 0 V; VDS = 8 V 2 - 6.5 mA
BF861B VGS = 0 V; VDS = 8 V 6 - 15 mA
BF861C VGS = 0 V; VDS = 8 V 12 - 25 mA
Ptot total power dissipation up to Tamb = 25