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Guilin Strong Micro-Electronics Co.,Ltd.
GM812
MAXIMUM RATINGS
Characteristic Symbol Rating Unit
Collector-Emitter Voltage
VCEO -50 Vdc
-
Collector-Base Voltage
VCBO -60 Vdc
-
Emitter-Base Voltage
VEBO -5.0 Vdc
-
Collector Current--Continuous
Ic -100 mAdc
-
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation
PD 225 mW
FR-5 Board(1)
TA=25 25
1.8 mW/
Derate above25 25
Total Device Dissipation 300 mW
PD
Alumina Substrate ,(2)TA=25
Derate above25 25 2.4 mW/
Thermal Resistance Junction to Ambient
RJA 417 /W
Junction and Storage Temperature
TJ,Tstg -55to+150
DEVICE MARKING
GM812=M4-M7
HFE:90-180=M4 135-270=M5 200-400=M6 300-600=M7
Guilin Strong Micro-Electronics Co.,Ltd.
GM812
ELECTRICAL CHARACTERISTICS
=25 unless otherwise noted 25)
(TA=25 )
Characteristic Symbol Min Type Max Unit
OFF CHARACTERISTICS
Emitter Cutoff Current
IEBO -- -- -0.1 A
(VEB=-5.0v,IC=0)
Collector Cutoff Current
ICBO -- -- -0.1 A
(VCB=-60v,IE=0)
Collector Saturation Voltage
VCE(sat) -- -0.18 -0.3 Vdc
(Ic=-100mAdc,IB=-10mA)
Base to Emitter Voltage
VBE -0.58 -0.62 -0.68 Vdc
-(VCE=-6.0v,IC=-1.0mA)
DC Current Gain
HFE 90 200 600
(VCE=-6.0v,IC=-1.0mA)
Gain Bandwidth Product
fT -- -180 -- MHz
(VCE=-6.0v,IC=-1.0mA)
Output Capacitance
Cob -- 4.5 -- pF
(VCB=-10v,IE=0,f=1.0MHz)
1. FR-5=1.0