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KSC2331
TO-92MOD Transistor (NPN)
TO-92MOD
1.EMITTER
5.800
1 6.200
2 2.COLLECTOR
3
3.BASE 8.400
8.800
0.900
1.100
0.400
Features 0.600
13.800
Complement to KSA931 14.200
High collector-Base Voltage: VCBO=80V
Collector current: IC=700mA 1.500 TYP
2.900
Collector dissipation: P =1W 3.100
C
0.000 1.600
0.380
MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.400 4.700
0.500 5.100
Symbol Parameter Value Units
1.730
VCBO Collector-Base Voltage 80 V 4.000 2.030
VCEO Collector-Emitter Voltage 60 V Dimensions in inches and (millimeters)
VEBO Emitter-Base Voltage 8 V
IC Collector Current -Continuous 700 mA
PC Collector Power Dissipation 1 W
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC= 100A,IE=0 80 V
Collector-emitter breakdown voltage V(BR)CEO IC= 10mA,IB=0 60 V
Emitter-base breakdown voltage V(BR)EBO IE= 10A,IC=0 8 V
Collector cut-off current ICBO VCB=60V,IE=0 0.1 A
Emitter cut-off current IEBO VEB=5V,IC=0 0.1 A
DC current gain hFE VCE=2V,IC=50mA 40 240
Collector-emitter saturation voltage VCE(sat) IC=500m A,IB=50mA 0.7 V
Base-emitter voltage VBE(sat) IC=500mA,IB=50mA 1.2 V
Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 8 pF
Transition frequency fT VCE=10V,IC=50mA 30 MHz
CLASSIFICATION OF hFE
Rank R O Y
Range 40-80 70-140 120-240
KSC2331
TO-92MOD Transistor (NPN)