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MJE18004D2G

High Speed, High Gain
Bipolar NPN Power
Transistor
with Integrated Collector-Emitter Diode
and Built-in Efficient Antisaturation http://onsemi.com
Network
POWER TRANSISTORS
The MJE18004D2 is state-of-art High Speed High gain BIPolar
transistor (H2BIP). High dynamic characteristics and lot to lot 5 AMPERES,
minimum spread (