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PHK18NQ03LT
8
SO
N-channel TrenchMOS logic level FET
Rev. 03 -- 17 March 2011 Product data sheet

1. Product profile

1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.

1.2 Features and benefits
High efficiency due to low switching Suitable for logic level gate drive
and conduction losses sources

1.3 Applications
DC-to-DC converters Switched-mode power supplies
Notebook computers Voltage regulators

1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage Tj 25