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BD241A/B/C
BD242A/B/C

COMPLEMENTARY SILICON POWER TRANSISTORS
s SGS-THOMSON PREFERRED SALESTYPES
s COMPLEMENTARY PNP - NPN DEVICES

DESCRIPTION
The BD241A, BD241B and BD241C are silicon
epitaxial-base NPN transistors mounted in Jedec
TO-220 plastic package.
They are inteded for use in medium power linear
and switching applications. 3
2
The complementary PNP types are BD242A, 1
BD242B and BD242C respectively.
TO-220

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN BD241A BD241B BD241C
PNP BD242A BD242B BD242C
V CER Collector-Base Voltage (R BE = 100 ) 70 90 115 V
V CEO Collector-Emitter Voltage (I B = 0) 60 80 100 V
V EBO Emitter-Base Voltage (I C = 0) 5 V
IC Collector Current 3 A
I CM Collector Peak Current 5 A
IB Base Current 1 A
P tot Total Dissipation at T c 25 o C 40 W
P tot Total Dissipation at T amb 25 o C 2 W
o
T stg Storage Temperature -65 to 150 C
o
Tj Max. Operating Junction Temperature 150 C
For PNP types voltage and current values are negative.

June 1997 1/4
BD241A/B/C/BD242A/B/C

THERMAL DATA
o
R thj-case Thermal Resistance Junction-case Max 3.13 C/W
o
R thj-amb Thermal Resistance Junction-ambient Max 62.5 C/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I CES Collector Cut-off V CE = rated V CEO 0.2 mA
Current (V BE = 0)
I CEO Collector Cut-off for BD241A/BD242A V CE = 30 V 0.3 mA
Current (I B = 0) for BD241B/BD242B V CE = 60 V 0.3 mA
for BD241C/BD242C V CE = 60 V 0.3 mA
I EBO Emitter Cut-off Current V EB = 5 V 1 mA
(I C = 0)
V CEO(sus) Collector-Emitter I C = 30 mA
Sustaining Voltage for BD241A/BD242A 60 V
for BD241B/BD242B 80 V
for BD241C/BD242C 100 V
V CE(sat) Collector-Emitter IC = 3 A I B = 0.6 A 1.2 V
Saturation Voltage
V BE Base-Emitter Voltage IC = 3 A V CE = 4 V 1.8 V
h FE DC Current Gain IC = 1 A V CE = 4 V 25
IC = 3 A V CE = 4 V 10
hfe Small Signal Current I C = 0.5 A V CE = 10 V f = 1MHz 3
Gain I C = 0.5 A V CE = 10 V f = 1KHz 20
Pulsed: Pulse duration = 300