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SUM110N03-03P
Vishay Siliconix
N-Channel 30-V (D-S) 175_C MOSFET
FEATURES
PRODUCT SUMMARY D TrenchFETr Power MOSFET
V(BR)DSS (V) rDS(on) (W) ID (A)a D 175_C Junction Temperature
D Optimized for Low-Side Synchronous Rectifier
0.0026 @ VGS = 10 V 110a
30 D 100% Rg Tested
0.004 @ VGS = 4.5 V 110a
APPLICATIONS
D Desktop or Server CPU Core
D
TO-263
DRAIN connected to TAB
G
G D S
Top View
Ordering Information: SUM110N03-03P
SUM110N03-03P-E3 (Lead Free) S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 30
Gate-Source Voltage VGS "20 V
TC = 25_C 110a
Continuous Drain Current (TJ = 175_C) ID
TC = 100_C 110a
A
Pulsed Drain Current IDM 400
Avalanche Current IAR 65
Repetitive Avalanche Energyb L = 0.1 mH EAR 211 mJ
TC = 25_C (TO-220AB and TO-263) 375c
Maximum Power Dissipationb PD W
TA = 25_C (TO-263)d 3.75
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175 _C
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
PCB Mount (TO-263)d 40
Junction-to-Ambient
J ti t A bi t RthJA
Free Air (TO-220AB) 62.5 C/W
_C/W
Junction-to-Case RthJC 0.4
Notes
a. Package limited.
b. Duty cycle v 1%.
c. See SOA curve for voltage derating.
d. When mounted on 1" square PCB (FR-4 material).
Document Number: 71964 www.vishay.com
S-32523--Rev. B, 08-Dec-03 1
SUM110N03-03P
Vishay Siliconix
SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VDS = 0 V, ID = 250 mA 30
V
Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 1 2 3
Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA
VDS = 30 V, VGS = 0 V 1
g
Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V, TJ = 125_C 50 mA
m
VDS = 30 V, VGS = 0 V, TJ = 175_C 250
On-State Drain Currenta ID(on) VDS w 5 V, VGS = 10 V 120 A
VGS = 10 V, ID = 30 A 0.002 0.0026
VGS = 10 V, ID = 30 A, TJ = 125_C 0.004
Drain Source On State Resistancea
Drain-Source On-State rDS(on) W
VGS = 10 V, ID = 30 A, TJ = 175_C 0.005
VGS = 4.5 V, ID = 20 A 0.0031 0.004
Forward Transconductancea gfs VDS = 15 V, ID = 30 A 20 S
Dynamicb
Input Capacitance Ciss 12100
Output Capacitance Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 1910 pF
Reverse Transfer Capacitance Crss 1250
Total Gate Chargeb Qg 172 250
Gate-Source Chargeb Qgs VDS = 15 V, VGS = 10 V, ID = 110 A
, , 40 nC
Gate-Drain Chargeb Qgd 22
Gate Resistance Rg 0.3 1.3 1.9 W
Turn-On Delay Timeb td(on) 20 35
Rise Timeb tr 20 35
VDD = 15 V, RL = 0.18 W
ns
Turn-Off Delay Timeb td(off) ID ^ 110 A, VGEN = 10 V, Rg = 2.5 W 90 140
Fall Timeb tf 25 40
Source-Drain Diode Ratings and Characteristics (TC = 25_C)c
Continuous Current IS 85
A
Pulsed Current ISM 440
Forward Voltagea VSD IF = 110 A, VGS = 0 V 1.1 1.5 V
Reverse Recovery Time trr 60 120 ns
Peak Reverse Recovery Current IRM IF = 85 A, di/dt = 100 A/ms
m 3.5 5 A
Reverse Recovery Charge Qrr 0.1 0.3 mC
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Independent of operating temperature.
c. Guaranteed by design, not subject to production testing.
www.vishay.com Document Number: 71964
2 S-32523--Rev. B, 08-Dec-03
SUM110N03-03P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics Transfer Characteristics
250
200
VGS = 10 thru 5 V
200
160
I D - Drain Current (A)
I D - Drain Current (A)
150 4V 120
100
80
TC = 125_C
50
40
3V 25_C -55_C
0
0
0 2 4 6 8 10
0 1 2 3 4 5
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
Transconductance On-Resistance vs. Drain Current
250 0.0060
200
r DS(on) - On-Resistance ( W )
0.0045
g fs - Transconductance (S)
25_C
TC = -55_C
150 VGS = 4.5 V
0.0030
125_C
100 VGS = 10 V
0.0015
50
0 0.0000
0 10 20 30 40 50 60 70 80 90 0 20 40 60 80 100 120
ID - Drain Current (A) ID - Drain Current (A)
Capacitance Gate Charge
15000 10
Ciss
VDS = 15 V
V GS - Gate-to-Source Voltage (V)
12000 8 ID = 85 A
C - Capacitance (pF)
9000 6
6000 4
Coss
3000 2
Crss
0 0
0 6 12 18 24 30 0 30 60 90 120 150 180
VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC)
Document Number: 71964 www.vishay.com
S-32523--Rev. B, 08-Dec-03 3
SUM110N03-03P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage
2.0 100
VGS = 10 V
ID = 30 A
1.6
r DS(on) - On-Resistance (W)
I S - Source Current (A)
(Normalized)
1.2 TJ = 150_C
10
TJ = 25_C
0.8
0.4
0.0 1
-50 -25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2
TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V)
Drain Source Breakdown vs.
Junction Temperature
40
38 ID = 10 mA
(BR)DSS (V)
36
V
34
32
30
-50 -25 0 25 50 75 100 125 150 175
TJ - Junction Temperature (_C)
www.vishay.com Document Number: 71964
4 S-32523--Rev. B, 08-Dec-03
SUM110N03-03P
Vishay Siliconix
THERMAL RATINGS
Maximum Avalanche and Drain Current
vs. Case Temperature Safe Operating Area
120 1000
10 ms
Limited 100 ms
100
by rDS(on)
100
I D - Drain Current (A)
I D - Drain Current (A)
80 1 ms
10 ms
60 10
100 ms
dc
40
1 TC = 25_C
20 Single Pulse
0 0.1
0 25 50 75 100 125 150 175 0.1 1 10 100
TC - Ambient Temperature (_C) VDS - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
Normalized Effective Transient
0.2
Thermal Impedance
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (sec)
Document Number: 71964 www.vishay.com
S-32523--Rev. B, 08-Dec-03 5
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Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1