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2SC2883

TRANSISTOR (NPN)
SOT-89
FEATURES
Low voltage 1. BASE

MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. COLLECTOR 1
2
Symbol Parameter Value Units 3. EMITTER
3
VCBO Collector-Base Voltage 30 V

VCEO Collector-Emitter Voltage 30 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 1.5 A
PC Collector Power Dissipation 0.5 W
TJ Junction Temperature 150
Tstg Storage Temperature -55-150

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC=1mA,IE=0 30 V

Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=0 30 V

Emitter-base breakdown voltage V(BR)EBO IE=1mA,IC=0 5 V

Collector cut-off current ICBO VCB=30V,IE=0 0.1 A

Emitter cut-off current IEBO VEB=5V,IC=0 0.1 A

DC current gain hFE VCE=2V,IC=0.5A 100 320

Collector-emitter saturation voltage VCE(sat) IC=1.5A,IB=30mA 2 V

Base-emitter voltage VBE VCE=2V,IC=0.5A 1 V

Transition frequency fT VCE=2V,IC=500mA 120 MHz

Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 40 pF

CLASSIFICATION OF hFE
Rank O Y

Range 100-200 160-320

Marking GO GY

JinYu www.htsemi.com
semiconductor
2SC2883

JinYu www.htsemi.com
semiconductor
2SC2883

JinYu www.htsemi.com
semiconductor