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2SD965

SOT-89-3L
TRANSISTOR (NPN)

1. BASE
FEATURES
Low Collector-Emitter Saturation Voltage 2. COLLECTOR

Large Collector Power Dissipation and Current
3. EMITTER
Mini Power Type Package

MAXIMUM RATINGS (Ta=25 unless otherwise noted)

Symbol Parameter Value Unit
VCBO Collector-Base Voltage 40 V
VCEO Collector-Emitter Voltage 20 V
VEBO Emitter-Base Voltage 7 V
IC Collector Current 5 A
PC Collector Power Dissipation 750 mW
RJA Thermal Resistance From Junction To Ambient 167 /W
Tj Junction Temperature 150
Tstg Storage Temperature -55~+150

ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)

Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC=100