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2SD2413
TRANSISOR (NPN)
FEATURES
High collector to base voltage VCBO
SOT-89
High collector to emitter voltage VCEO
Large collector power dissipation PC
1. BASE
Low collector to emitter saturation voltage VCE(sat)
2. COLLECTOR 1
Marking:1S
2
MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. EMITTER 3
Symbol Parameter Value Units
VCBO Collector-Base Voltage 400 V
VCEO Collector-Emitter Voltage 400 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 100 mA
PC Collector Power Dissipation 500 mW
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=100A, IE=0 400 V
Collector-emitter breakdown voltage V(BR)CEO IC=0.5mA, IB=0 400 V
Emitter-base breakdown voltage V(BR)EBO IE=100A, IC=0 5 V
Collector cut-off current ICBO VCB=400V, IE=0 50 A
Emitter cut-off current IEBO VEB=5V, IC=0 50 A
DC current gain hFE VCE=5V, IC=30mA 30
Collector-emitter saturation voltage VCE(sat) IC=50mA, IB=5mA 1.5 V
Base-emitter saturation voltage VBE(sat) IC=50mA, IB=5mA 1.5 V
Transition frequency fT VCE=30V, IC=20mA, f=200MHz 40 MHz
Collector output capacitance Cob VCB = 30V, IE=0, f=1MHz 7 pF
JinYu www.htsemi.com
semiconductor
2SD2413
JinYu www.htsemi.com
semiconductor