Text preview for : 5991-4657EN B1507A Power Device Capacitance Analyzer - Brochure c20140829 [8].pdf part of Agilent 5991-4657EN B1507A Power Device Capacitance Analyzer - Brochure c20140829 [8] Agilent 5991-4657EN B1507A Power Device Capacitance Analyzer - Brochure c20140829 [8].pdf
Back to : 5991-4657EN B1507A Power | Home
Keysight Technologies
B1507A Power Device Capacitance Analyzer
Automatically evaluate all power device
capacitance parameters
(including Ciss, Coss, Crss, and Rg)
under a wide range of operating voltages
02 | Keysight | Power Device Capacitance Analyzer - Brochure
Crucial issues facing the power electronics industry
Do you understand the full impact of device capacitance
on increasing switching power supply frequencies?
In general, higher switching frequencies allow power electronics
circuits to be physically smaller and take up less area. However,
as frequency increases the device on-resistance (Ron) becomes
less important, and switching loss and driving loss become the
dominant factors that determine overall circuit power loss.
A power device's capacitance characteristics (which are non-
linear) are key parameters that help determine both switching
and driving losses. Reverse transfer capacitance (Crss) and gate
resistance (Rg) determine the switching speed, while the input
capacitance (Ciss) determines the gate driving condition. In addi-
tion, the output capacitance (Coss) is also a key parameter in de-
termining the switching loss for a resonant converter. Therefore,
it has become more important than ever to accurately evaluate
these parameters when designing power conversion circuits.
Switching converter loss
IGBT MOSFET GaN FET P (Drive loss ) = f *Qg* Vgs
Dynamic
SJ MOSFET
P (Switching loss) f * (V * I * T) Rg, Crss,