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INTEGRATED CIRCUITS

DATA SHEET
For a complete data sheet, please also download:
· The IC04 LOCMOS HE4000B Logic Family Specifications HEF, HEC · The IC04 LOCMOS HE4000B Logic Package Outlines/Information HEF, HEC

HEF4511B MSI BCD to 7-segment latch/decoder/driver
Product specification File under Integrated Circuits, IC04 January 1995

Philips Semiconductors

Product specification

BCD to 7-segment latch/decoder/driver
DESCRIPTION The HEF4511B is a BCD to 7-segment latch/decoder/driver with four address inputs (DA to DD), an active LOW latch enable input (EL), an active LOW ripple blanking input (BI), an active LOW lamp test input (LT), and seven active HIGH n-p-n bipolar transistor segment outputs (Oa to Og).

HEF4511B MSI

When EL is LOW, the state of the segment outputs (Oa to Og) is determined by the data on DA to DD. When EL goes HIGH, the last data present on DA to DD are stored in the latches and the segment outputs remain stable. When LT is LOW, all the segment outputs are HIGH independent of all other input conditions. With LT HIGH, a LOW on BI forces all segment outputs LOW. The inputs LT and BI do not affect the latch circuit.

Fig.2 Pinning diagram.

HEF4511BP(N): HEF4511BD(F): HEF4511BT(D):

16-lead DIL; plastic (SOT38-1) 16-lead DIL; ceramic (cerdip) (SOT74) 16-lead SO; plastic (SOT109-1)

( ): Package Designator North America Fig.1 Functional diagram. PINNING DA to DD EL BI LT Oa to Og address (data) inputs latch enable input (active LOW) ripple blanking input (active LOW) lamp test input (active LOW) segment outputs

Fig.4

Segment designation.

FAMILY DATA, IDD LIMITS category MSI Fig.3 Schematic diagram of output stage. See Family Specifications

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BCD to 7-segment latch/decoder/driver HEF4511B MSI

Product specification

Philips Semiconductors

Product specification

BCD to 7-segment latch/decoder/driver

HEF4511B MSI

Fig.6 Logic diagram (one latch); see also Fig.5.

FUNCTION TABLE INPUTS EL X X L L L L L L L L L L L L L L L L H Note 1. H = HIGH state (the more positive voltage) L = LOW state (the less positive voltage) X = state is immaterial * Depends upon the BCD code applied during the LOW to HIGH transition of EL. BI X L H H H H H H H H H H H H H H H H H LT L H H H H H H H H H H H H H H H H H H DD X X L L L L L L L L H H H H H H H H X DC X X L L L L H H H H L L L L H H H H X DB X X L L H H L L H H L L H H L L H H X DA X X L H L H L H L H L H L H L H L H X Oa H L H L H H L H L H H H L L L L L L Ob H L H H H H H L L H H H L L L L L L Oc H L H H L H H H H H H H L L L L L L OUTPUTS Od H L H L H H L H H L H L L L L L L L * Oe H L H L H L L L H L H L L L L L L L Of H L H L L L H H H L H H L L L L L L Og H L L L H H H H H L H H L L L L L L DISPLAY 8 blank 0 1 2 3 4 5 6 7 8 9 blank blank blank blank blank blank *

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Philips Semiconductors

Product specification

BCD to 7-segment latch/decoder/driver

HEF4511B MSI

Fig.7 Display.

RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134). Output (source) current HIGH For other RATINGS see Family Specifications. Note 1. A destructive high current mode may occur if VI and VO are not constrained to the range VSS VI or VO VDD. -IOH max. 25 mA

January 1995

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Philips Semiconductors

Product specification

BCD to 7-segment latch/decoder/driver
DC CHARACTERISTICS VSS = 0 V Tamb (°C) HEF VDD V 5 10 15 Output voltage HIGH Output voltage HIGH Output voltage HIGH Output voltage HIGH Output voltage HIGH 5 10 15 5 10 15 5 10 15 5 10 15 5 10 15 IOH mA 0 0 0 5 5 5 10 10 10 15 15 15 20 20 20 25 25 25 VOH VOH 2,80 8,10 13,10 2,80 8,10 13,10 VOH VOH 3,60 8,75 13,75 3,60 8,75 13,75 VOH VOH SYMBOL MIN. Output voltage HIGH 4,10 9,10 14,10 -40 MAX. MIN. 4,10 9,10 14,10 + 25 TYP. 4,40 9,40 14,40 4,20 9,20 14,20 4,05 9,10 14,10 4,00 9,00 14,00 3,80 9,00 14,00 3,70 8,90 14,00 2,50 7,80 12,80 3,30 8,45 13,45

HEF4511B MSI

+ 85 MIN. 4,10 9,10 14,10 MAX. V V V V V V V V V V V V V V V V V V

January 1995

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Philips Semiconductors

Product specification

BCD to 7-segment latch/decoder/driver

HEF4511B MSI

Tamb (°C) HEC VDD V 5 10 15 Output voltage HIGH Output voltage HIGH Output voltage HIGH Output voltage HIGH Output voltage HIGH 5 10 15 5 10 15 5 10 15 5 10 15 5 10 15 IOH mA 0 0 0 5 5 5 10 10 10 15 15 15 20 20 20 25 25 25 VOH VOH 2,80 8,10 13,10 2,80 8,10 13,10 VOH VOH 3,60 8,75 13,75 3,60 8,75 13,75 VOH VOH SYMBOL MIN. Output voltage HIGH 4,10 9,10 14,10 -55 MAX. MIN. 4,10 9,10 14,10 + 25 TYP. 4,40 9,90 14,40 4,30 9,30 14,30 4,25 9,25 14,25 4,20 9,20 14,20 4,20 9,20 14,20 4,15 9,20 14,20 2,30 7,60 12,60 3,20 8,35 13,35 + 125 MIN. 4,10 9,10 14,40 MAX. V V V V V V V V V V V V V V V V V V

AC CHARACTERISTICS VSS = 0 V; Tamb = 25 °C; input transition times 20 ns VDD V Dynamic power dissipation per package (P) 5 10 15 TYPICAL FORMULA FOR P (µW) 1 000 fi + (foCL) × VDD2 4 000 fi + (foCL) × VDD
2

where fi = input freq. (MHz) fo = output freq. (MHz) CL = load capacitance (pF) (foCL) = sum of outputs VDD = supply voltage (V)

10 000 fi + (foCL) × VDD2

January 1995

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Philips Semiconductors

Product specification

BCD to 7-segment latch/decoder/driver
AC CHARACTERISTICS VSS = 0 V; Tamb = 25 °C; CL = 50 pF; input transition times 20 ns VDD V Propagation delays Dn On HIGH to LOW 5 10 15 5 LOW to HIGH EL On HIGH to LOW 10 15 5 10 15 5 LOW to HIGH BI On HIGH to LOW BI On LOW to HIGH LT On HIGH to LOW 10 15 5 10 15 5 10 15 5 10 15 5 LOW to HIGH Output transition times HIGH to LOW 10 15 5 10 15 5 LOW to HIGH 10 15 tTLH tTHL tPLH tPHL tPLH tPHL tPLH tPHL tPLH tPHL 155 60 40 135 55 40 160 60 45 160 70 50 120 50 35 105 40 30 80 30 20 60 30 25 60 30 20 25 16 13 310 ns 120 ns 80 ns 270 ns 110 ns 80 ns 320 ns 120 ns 90 ns 320 ns 140 ns 100 ns 240 ns 100 ns 70 ns 210 ns 80 ns 60 ns 160 ns 60 ns 40 ns 120 ns 60 ns 50 ns 120 ns 60 ns 40 ns 50 ns 32 ns 26 ns 128 ns 49 ns 32 ns 108 ns 44 ns 32 ns 133 ns 49 ns 37 ns 133 ns 59 ns 42 ns 93 ns 39 ns 27 ns 78 ns 29 ns 22 ns 52 ns 19 ns 12 ns 33 ns 19 ns 17 ns 10 ns 9 ns 6 ns 20 ns 13 ns 10 ns + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + SYMBOL MIN. TYP. MAX.

HEF4511B MSI

TYPICAL EXTRAPOLATION FORMULA (0,55 ns/pF) CL (0,23 ns/pF) CL (0,16 ns/pF) CL (0,55 ns/pF) CL (0,23 ns/pF) CL (0,16 ns/pF) CL (0,55 ns/pF) CL (0,23 ns/pF) CL (0,16 ns/pF) CL (0,55 ns/pF) CL (0,23 ns/pF) CL (0,16 ns/pF) CL (0,55 ns/pF) CL (0,23 ns/pF) CL (0,16 ns/pF) CL (0,55 ns/pF) CL (0,23 ns/pF) CL (0,16 ns/pF) CL (0,55 ns/pF) CL (0,23 ns/pF) CL (0,16 ns/pF) CL (0,55 ns/pF) CL (0,23 ns/pF) CL (0,16 ns/pF) CL (1,0 ns/pF) CL (0,42 ns/pF) CL (0,28 ns/pF) CL (1,0 na/pF) CL (0,06 ns/pF) CL (0,06 ns/pF) CL

January 1995

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Philips Semiconductors

Product specification

BCD to 7-segment latch/decoder/driver

HEF4511B MSI
MAX. ns ns ns ns ns ns ns ns ns see also waveforms Fig.8 TYPICAL EXTRAPOLATION FORMULA

VDD V Minimum EL pulse width; LOW Set-up time Dn EL Hold-time Dn EL 5 10 15 5 10 15 5 10 15

SYMBOL

MIN. 80

TYP. 40 20 17 25 12 9 30 15 12

tWELL

40 35 50

tsu

25 20 60

thold

30 25

Conditions: DD = LOW DA = DB = BI = LT = HIGH

Fig.8 Waveforms showing minimum EL pulse width, set-up and hold time for DC to EL.

January 1995

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Philips Semiconductors

Product specification

BCD to 7-segment latch/decoder/driver
APPLICATION INFORMATION Some examples of applications for the HEF4511B are: · Driving LED displays. · Driving incandescent displays. · Driving fluorescent displays. · Driving LCD displays. · Driving gas discharge displays.

HEF4511B MSI

Fig.9 Connection to common cathode LED display readout.

Fig.10 Connection to common anode LED display readout.

January 1995

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Philips Semiconductors

Product specification

BCD to 7-segment latch/decoder/driver

HEF4511B MSI

(1) A filament pre-warm resistor is recommended to reduce filament thermal shock and increase the effective cold resistance of the filament.

Fig.11 Connection to incandescent display readout.

Fig.12 Connection to fluorescent display readout.

Fig.13 Connection to gas discharge display readout.

Fig.14 Connection to liquid crystal (LCD) display readout. Direct d.c. drive of LCDs not recommended for life of LCD readouts.

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