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2SD1119

SOT-89
TRANSISTOR (NPN)
FEATURES 1. BASE
Low collector-emitter saturation voltage VCE(sat)
Satisfactory operation performances at high efficiency with the low 2. COLLECTOR 1
voltage power supply. 2
3. EMITTER 3

MAXIMUM RATINGS (TA=25 unless otherwise noted)

Symbol Parameter Value Units
VCBO Collector- Base Voltage 40 V
VCEO Collector-Emitter Voltage 25 V
VEBO Emitter-Base Voltage 7 V
IC Collector Current -Continuous 3 A
PC Collector Dissipation 500 mW
TJ Junction Temperature 150
Tstg Storage Temperature -55-150

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC =100A, IE=0 40 V

Collector-emitter breakdown voltage V(BR)CEO IC =1mA, IB=0 25 V

Emitter-base breakdown voltage V(BR)EBO IE=10A, IC=0 7 V

Collector cut-off current ICBO VCB=10V, IE=0 0.1 A

Emitter cut-off current IEBO VEB=6V, IC=0 0.1 A

hFE(1) VCE=2V, IC=500mA 230 600
DC current gain
hFE(2) VCE=2V, IC=2A 150

Collector-emitter saturation voltage VCE(sat) IC=3A, IB=0.1A 1 V

Transition frequency fT VCE=6V, IC=50mA, f=200MHz 150 MHz

Collector output capacitance Cob VCB=20V, f=1MHz 50 pF

CLASSIFICATION OF hFE(1)
Rank Q R

Range 230-380 340-600

Marking TQ TR

JinYu www.htsemi.com
semiconductor
2SD1119

JinYu www.htsemi.com
semiconductor