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2SD596

TRANSISTOR (NPN)
FEATURES SOT-23
High DC Current gain.
Complimentary to 2SB624
MAXIMUM RATINGS (TA=25 unless otherwise noted)
1.BASE
Symbol Parameter Value Units 2.EMITTER
VCBO Collector-Base Voltage 30 V 3.COLLECTOR
VCEO Collector-Emitter Voltage 25 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 700 mA
PC Collector Power Dissipation 200 mW
Tj Junction Temperature 150
Tstg Storage Temperature -55-150

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC=100A, IE=0 30 V

Collector-emitter breakdown voltage V(BR)CEO IC= 1mA, IB=0 25 V

Emitter-base breakdown voltage V(BR)EBO IE= 100A, IC=0 5 V

Collector cut-off current ICBO VCB=30V , IE=0 0.1 A
Emitter cut-off current IEBO VEB= 5V , IC=0 0.1 A
hFE(1)* VCE= 1V, IC= 100mA 110 400
DC current gain
hFE(2)* VCE=1V, IC= 700mA 50

Collector-emitter saturation voltage VCE(sat) * IC=700mA, IB=70mA 0.6 V

Base-emitter voltage VBE * VCE=6V, IC=10mA 0.6 0.7 V

Transition frequency fT VCE=6V, IC= 10mA 170 MHz

Collector Output Capacitance Cob VCB=6V,IE=0,f=10MHZ 12 pF

* Pulse test : Pulse width 350s,Duty Cycle2%.

CLASSIFICATION OF hFE(1)
Marking DV1 DV2 DV3 DV4 DV5
Range 110-180 135-220 170-270 200-320 250-400

JinYu www.htsemi.com
semiconductor
JinYu www.htsemi.com
semiconductor
JinYu www.htsemi.com
semiconductor