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2SC3052
TRANSISTOR (NPN)
SOT-23
FEATURES
Low collector to emitter saturation voltage
VCE(sat)=0.3V max(@IC=100mA,IB=10mA) 1. BASE
Excellent linearity of DC forward current gain 2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector- Base Voltage 50 V
VCEO Collector-Emitter Voltage 50 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current -Continuous 0.2 A
PC Collector Power Dissipation 150 mW
TJ Junction Temperature 125
Tstg Storage Temperature -55-125
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V (BR) CBO IC = 100 A, IE=0 50 V
Collector-emitter breakdown voltage V (BR) CEO IC = 100 A, IB=0 50 V
Emitter-base breakdown voltage V (BR) EBO IE= 100 A, IC=0 6 V
Collector cut-off current ICBO VCB= 50 V , IE=0 0.1 A
Emitter cut-off current IEBO VEB= 6V , IC=0 0.1 A
hFE(1) VCE= 6V, IC= 1mA 150 800
DC current gain
hFE(2) VCE= 6V, IC= 0.1mA 50
Collector-emitter saturation voltage VCE (sat) IC=100mA, IB= 10mA 0.3 V
Base-emitter saturation voltage VBE (sat) IC= 100mA, IB= 10mA 1 V
Transition frequency fT VCE= 6V, IC= 10mA 180 MHz
Collector output capacitance Cob VCE=6V, IE=0, f=1MHz 4 pF
Noise figure NF VCE=6V,IE=-0.1mA, f=1KHz, RG=2K 15 dB
CLASSIFICATION OF hFE(1)
Rank E F G
Range 150~300 250~500 400~800
Marking LE LF LG
JinYu www.htsemi.com
semiconductor
2SC3052
JinYu www.htsemi.com
semiconductor
2SC3052
JinYu www.htsemi.com
semiconductor