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Jan 2003

AO4422
N-Channel Enhancement Mode Field Effect Transistor

General Description Features

The AO4422 uses advanced trench technology to VDS (V) = 30V
provide excellent RDS(ON) and low gate charge. This ID = 11A
device is suitable for use as a load switch or in PWM RDS(ON) < 15m (VGS = 10V)
applications. The source leads are separated to allow RDS(ON) < 24m (VGS = 4.5V)
a Kelvin connection to the source, which may be
used to bypass the source inductance.

D

S D
S D
S D
G D G
S
SOIC-8

Absolute Maximum Ratings TA=25