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April 1998
FDR4410
N-Channel Enhancement Mode Field Effect Transistor
General Description Features
The FDR4410 has been designed as a smaller, low cost 9.3 A, 30 V. RDS(ON) = 0.013 @ VGS = 10 V
alternative to the popular Si4410DY. RDS(ON) = 0.020 @ VGS = 4.5 V.
The SuperSOTTM-8 package is 40% smaller than the SO-8 High density cell design for extremely low RDS(ON).
package. Proprietary SuperSOTTM-8 small outline surface mount
package with high power and current handling capability.
The SuperSOTTM-8 advanced package design and
optimized pinout allow the typical power dissipation to be
similar to the bigger SO-8 package.
SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16
S 5 4
D
D
S 6 3
10
44
7 2
G
D
D 8 1
TM
pin 1
D
SuperSOT -8
Absolute Maximum Ratings TA = 25oC unless otherwise noted
Symbol Parameter FDR4410 Units
VDSS Drain-Source Voltage 30 V
VGSS Gate-Source Voltage