buk9516-55a_buk9616-55a.pdf part of Philips buk9516-55a buk9616-55a buk9516-55a_buk9616-55a.pdf, . Electronic Components Datasheets Active components Transistors Philips buk9516-55a

Text preview for : buk9516-55a_buk9616-55a.pdf part of Philips buk9516-55a buk9616-55a . Electronic Components Datasheets Active components Transistors Philips buk9516-55a_buk9616-55a.pdf

Back to : buk9516-55a_buk9616-55a.p | Home

Philips Semiconductors Product specification

TrenchMOS transistor BUK9516-55A
Logic level FET BUK9616-55A

GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT
level field-effect power transistor in a
plastic envelope available in VDS Drain-source voltage 55 V
TO220AB and SOT404 . Using ID Drain current (DC) 66 A
'trench' technology which features Ptot Total power dissipation 138 W
very low on-state resistance. It is Tj Junction temperature 175