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FDMS3672 N-Channel UltraFET Trench MOSFET
February 2007

FDMS3672 tm

N-Channel UltraFET Trench MOSFET
100V, 22A, 23m
Features General Description
Max rDS(on) = 23m at VGS = 10V, ID = 7.4A UItraFET devices combine characteristics that enable
Max rDS(on) = 29m at VGS = 6V, ID = 6.6A benchmark efficiency in power conversion applications.
Optimized for rDS(on), low ESR, low total and Miller gate charge,
Typ Qg = 31nC at VGS = 10V these devices are ideal for high frequency DC to DC converters.
Low Miller Charge Application
Optimized efficiency at high frequencies
DC - DC Conversion
RoHS Compliant

Pin 1 S S S G

D 5 4 G

D 6 3 S

D 7 2 S

D 8 1 S
D D D D
Power (Bottom view)

MOSFET Maximum Ratings TA = 25