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May 1998
FDS8934A
Dual P-Channel Enhancement Mode Field Effect Transistor
General Description Features
SO-8 P-Channel enhancement mode power field effect -4 A , -20 V, RDS(ON) = 0.055 @ VGS = -4.5 V,
transistors are produced using Fairchild's proprietary, high RDS(ON) = 0.072 @ VGS = -2.5 V.
cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance High density cell design for extremely low RDS(ON).
and provide superior switching performance. These devices
are particularly suited for low voltage applications such as High power and current handling capability in a widely
notebook computer power management and other battery used surface mount package.
powered circuits where fast switching, low in-line power loss, Dual MOSFET in surface mount package.
and resistance to transients are needed.
SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16
D2
D2 5 4
D1 S
D1
FD 4A
3 6 3
89
G2 7 2
S2
G1 8 1
SO-8 pin 1
S1
Absolute Maximum Ratings TA = 25oC unless otherwise noted
Symbol Parameter FDS8934A Units
VDSS Drain-Source Voltage -20 V
VGSS Gate-Source Voltage -8 V
ID Drain Current - Continuous (Note 1a) -4 A
- Pulsed -20
PD Power Dissipation for Dual Operation 2 W
Power Dissipation for Single Operation (Note 1a) 1.6
(Note 1b) 1
(Note 1c) 0.9
TJ,TSTG Operating and Storage Temperature Range -55 to 150