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Si3443DV
April 2001
Si3443DV
P-Channel 2.5V Specified PowerTrench MOSFET
General Description Features
This P-Channel 2.5V specified MOSFET is produced -4 A, -20 V. RDS(ON) = 0.065 @ VGS = -4.5 V
using Fairchild's advanced PowerTrench process that
RDS(ON) = 0.100 @ VGS = -2.5 V
has been especially tailored to minimize on-state
resistance and yet maintain low gate charge for
superior switching performance. Fast switching speed.
These devices have been designed to offer exceptional Low gate charge (7.2nC typical).
power dissipation in a very small footprint for
applications where the larger packages are impractical. High performance trench technology for extremely
low RDS(ON).
Applications SuperSOTTM-6 package: small footprint (72% smaller
Load switch than standard SO-8); low profile (1mm thick).
Battery protection
Power management
S
D 1 6
D
2 5
G
D 3 4
SuperSOT -6 TM D
Absolute Maximum Ratings TA = 25