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RN2321ARN2327A
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2321A,RN2322A,RN2323A,RN2324A
RN2325A,RN2326A,RN2327A
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit in mm
High current driving is possible.
Since bias resisters are built in the transistor, the miniaturization of the
apparatus by curtailment of the number of parts and laborsaving of an
assembly are possible.
Many kinds of resistance value are lined up in order to support various
kinds of circuit design.
Complementary to RN1321A~RN1327A
Low VCE(sat) enable to be low power dissipation on high current driving.

Equivalent Circuit And Bias Resistance Values

Type No. R1 (k) R2 (k)

RN2321A 1 1 1.BASE
2.EMITTER
RN2322A 2.2 2.2 3.COLLECTOR
RN2323A 4.7 4.7
RN2324A 10 10
JEDEC
RN2325A 0.47 10
JEITA SC-70SCSC
RN2326A 1 10
TOSHIBA 2-2E1A
RN2327A 2.2 10
Weight: 0.006 g (typ.)

Absolute Maximum Ratings (Ta = 25