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STFW3N150
STP3N150, STW3N150
N-channel 1500 V, 6 , 2.5 A, PowerMESHTM Power MOSFET
in TO-220, TO-247, TO-3PF
Features
RDS(on)
Type VDSS ID PTOT
max.
STFW3N150 1500 V <9 2.5 A 63 W 3
2
STP3N150 1500 V <9 2.5 A 140 W 1
STW3N150 1500 V <9 2.5 A 140 W TO-220
100% avalanche tested
Intrinsic capacitances and Qg minimized
3 3
High speed switching 1
2 2
1
Fully isolated TO-3PF plastic package TO-247
TO-3PF
Creepage distance path is 5.4 mm (typ.) for
TO-3PF
Figure 1. Internal schematic diagram
Application
Switching applications
Description
Using the well consolidated high voltage MESH
OVERLAYTM process, STMicroelectronics has
designed an advanced family of very high voltage
Power MOSFETs with outstanding performances.
The strengthened layout coupled with the
company's proprietary edge termination structure,
gives the lowest RDS(on) per area, unrivalled gate
charge and switching characteristics.
Table 1. Device summary
Order codes Marking Package Packaging
STFW3N150 3N150 TO-3PF Tube
STP3N150 3N150 TO-220 Tube
STW3N150 3N150 TO-247 Tube
June 2010 Doc ID 13102 Rev 9 1/15
www.st.com 15
Contents STFW3N150, STP3N150, STW3N150
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6
3 Test circuits .............................................. 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2/15 Doc ID 13102 Rev 9
STFW3N150, STP3N150, STW3N150 Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Value
Symbol Parameter Unit
TO-220,TO-247 TO-3PF
VDS Drain-source voltage (VGS = 0) 1500 V
VGS Gate-source voltage