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June 1997

NDS332P
P-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description Features
These P-Channel logic level enhancement mode power field -1 A, -20 V, RDS(ON) = 0.41 @ VGS= -2.7 V
effect transistors are produced using Fairchild's proprietary, high RDS(ON) = 0.3 @ VGS = -4.5 V.
cell density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance. These Very low level gate drive requirements allowing direct
devices are particularly suited for low voltage applications such as operation in 3V circuits. VGS(th) < 1.0V.
notebook computer power management, portable electronics,
Proprietary package design using copper lead frame for
and other battery powered circuits where fast high-side
superior thermal and electrical capabilities.
switching, and low in-line power loss are needed in a very small
outline surface mount package. High density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current
capability.
Compact industry standard SOT-23 surface Mount
package.

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D

G S

Asolute Maximum Ratings T A = 25