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TECHNICAL DATA

NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/537

Devices Qualified Level
JAN
2N6674 2N6675 2N6689 2N6690 JANTX
JANTXV

MAXIMUM RATINGS
Ratings Symbol 2N6674 2N6675 Unit
2N6689 2N6690
Collector-Emitter Voltage VCEO 300 400 Vdc
Collector-Base Voltage VCBO 450 650 Vdc
Collector-Base Voltage VCEX 450 650 Vdc
Emitter-Base Voltage VEBO 7.0 Vdc
Base Current IB 5.0 Adc 2N6674, 2N6675
Collector Current IC 15 Adc TO-3 (TO-204AA)*
2N6674 2N6689
2N6675 2N6690
Total Power Dissipation @ TA = +250C 6.0(2) 3.0(3) W
PT
@ TC = +250C(1) 175 175 W
0
Operating & Storage Temperature Range Top; Tstg -65 to +200 C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
0
Thermal Resistance, Junction-to-Case RJC 1.0 C/W
1) Derate linearly 1.0 W/0C for TC > 250C
2N6689, 2N6690
2) Derate linearly 34.2 mW/0C for TA > 250C TO-61*
3) Derate linearly 17.1 mW/0C for TA > 250C
* See Appendix A for Package
Outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 200 mAdc 2N6674, 2N6689 V(BR)CEO 300 Vdc
2N6675, 2N6690 400
Collector-Emitter Cutoff Current
VCE = 450 Vdc, VBE = -1.5 Vdc 2N6674, 2N6689 ICEX 0.1 mAdc
VCE = 650 Vdc, VBE = -1.5 Vdc 2N6675, 2N6690 0.1

6 Lake Street, Lawrence, MA 01841 120101
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 Page 1 of 2
2N6674, 2N6675, 2N6689, 2N6690 JAN SERIES

ELECTRICAL CHARACTERISTICS (con't)
Characteristics Symbol Min. Max. Unit
Emitter-Base Cutoff Current
IEBO mAdc
VEB = 7.0 Vdc 2.0
Collector-Base Cutoff Current
VCB = 450 Vdc 2N6674, 2N6689 ICBO 1.0 mAdc
VCB = 650 Vdc 2N6675, 2N6690 1.0
ON CHARACTERISTICS (4)
Forward-Current Transfer Ratio
IC = 1 Adc; VCE = 3.0 Vdc hFE 15 40
IC = 10 Adc; VCE = 2.0 Vdc 8 20
Collector-Emitter Saturation Voltage
IC = 10 Adc; IB = 2 Adc VCE(sat) 1.0 Vdc
IC = 15 Adc; IB = 5 Adc 5.0
Base-Emitter Saturation Voltage
VBE(sat) 1.5 Vdc
IC = 10 Adc; IB = 2 Adc
DYNAMIC CHARACTERISTICS
Small-Signal Short-Circuit Forward Current Transfer Ratio
hfe 3.0 10
IC = 1.0 Adc, VCE = 10 Vdc, f = 5 MHz
Output Capacitance
Cobo 150 500 pF
VCB = 10 Vdc, IE = 0, 100 kHz f 1.0 MHz
SWITCHING CHARACTERISTICS
Delay Time t
d 0.1