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AO4407
P-Channel Enhancement Mode Field Effect Transistor

General Description Features

The AO4407 uses advanced trench technology to VDS (V) = -30V
provide excellent RDS(ON), and ultra-low low gate ID = -12 A (VGS = -20V)
charge with a 25V gate rating. This device is suitable RDS(ON) < 13m (VGS = -20V)
for use as a load switch or in PWM applications. RDS(ON) < 14m (VGS = -10V)
Standard Product AO4407 is Pb-free (meets ROHS
& Sony 259 specifications). AO4407L is a Green
Product ordering option. AO4407 and AO4407L are
electrically identical.

D
SOIC-8
Top View

S D
S D
S D G
G D S

Absolute Maximum Ratings TA=25