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PD- 91773

IRG4CC81UB
IRG4CC81UB IGBT Die in Wafer Form

C

600 V
Size 8.1
Ultra-Fast Speed
G
6" Wafer
E

Electrical Characteristics ( Wafer Form )
Parameter Description Guaranteed (Min/Max) Test Conditions
VCE (on) Collector-to-Emitter Saturation Voltage 4.5V Max. IC = 10A, TJ = 25