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STF24NM60N
STP24NM60N, STW24NM60N
N-channel 600 V, 0.168 17 A MDmeshTM II Power MOSFET
,
TO-220FP, TO-220 and TO-247

Features
VDSS RDS(on)
Order codes ID
(@Tjmax) max.
STF24NM60N 650 V < 0.19 17 A 3 3
2 2
STP24NM60N 650 V < 0.19 17 A 1 1

TO-220FP TO-220
STW24NM60N 650 V < 0.19 17 A

100% avalanche tested
Low input capacitance and gate charge 3
2
Low gate input resistance 1
TO-247
Applications
Switching applications
Figure 1. Internal schematic diagram
Description
These devices are N-channel Power MOSFETs
developed using the second generation of
MDmeshTM technology. This revolutionary Power
MOSFET associates a vertical structure to the
company's strip layout to yield one of the world's
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.

Table 1. Device summary
Order codes Marking Package Packaging

STF24NM60N TO-220FP
STP24NM60N 24NM60N TO-220 Tube
STW24NM60N TO-247

July 2011 Doc ID 18047 Rev 2 1/17
www.st.com 17
Contents STF24NM60N, STP24NM60N, STW24NM60N

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6

3 Test circuits .............................................. 9

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

2/17 Doc ID 18047 Rev 2
STF24NM60N, STP24NM60N, STW24NM60N Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings
Value
Symbol Parameter Unit
TO-220
TO-220FP
TO-247

VGS Gate- source voltage