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March 1998
FDN357N
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description Features
SuperSOTTM-3 N-Channel logic level enhancement mode power 1.9 A, 30 V, RDS(ON) = 0.090 @ VGS = 4.5 V
field effect transistors are produced using Fairchild's RDS(ON) = 0.060 @ VGS = 10 V.
proprietary, high cell density, DMOS technology. This very high
density process is especially tailored to minimize on-state Industry standard outline SOT-23 surface mount
resistance. These devices are particularly suited for low voltage package using proprietary SuperSOTTM-3 design for
applications in notebook computers, portable phones, PCMCIA superior thermal and electrical capabilities.
cards, and other battery powered circuits where fast
High density cell design for extremely low RDS(ON).
switching, and low in-line power loss are needed in a very small
outline surface mount package. Exceptional on-resistance and maximum DC current
capability.
SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16
D D
7
35
S
SuperSOT -3
TM G G S
Absolute Maximum Ratings TA = 25oC unless other wise noted
Symbol Parameter FDN357N Units
VDSS Drain-Source Voltage 30 V
VGSS Gate-Source Voltage - Continuous