irfz48n_1.pdf part of International Rectifier irfz48n 1 irfz48n_1.pdf, . Electronic Components Datasheets Active components Transistors International Rectifier irfz48n

Text preview for : irfz48n_1.pdf part of International Rectifier irfz48n 1 . Electronic Components Datasheets Active components Transistors International Rectifier irfz48n_1.pdf

Back to : irfz48n_1.pdf | Home

Philips Semiconductors Product specification

N-channel enhancement mode IRFZ48N
TrenchMOSTM transistor

GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT
standard level field-effect power
transistor in a plastic envelope using VDS Drain-source voltage 55 V
'trench' technology. The device ID Drain current (DC) 64 A
features very low on-state resistance Ptot Total power dissipation 140 W
and has integral zener diodes giving Tj Junction temperature 175