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Advanced Power MOSFET IRLS640A
FEATURES
BVDSS = 200 V
! Logic-Level Gate Drive
! Avalanche Rugged Technology
RDS(on) = 0.18
! Rugged Gate Oxide Technology ID = 9.8 A
! Lower Input Capacitance
! Improved Gate Charge
TO-220F
! Extended Safe Operating Area
! Lower Leakage Current : 10 A (Max.) @ VDS = 200V
! Lower RDS(ON) : 0.145 (Typ.)
1
2
3

1.Gate 2. Drain 3. Source

Absolute Maximum Ratings
Symbol Characteristic Value Units
VDSS Drain-to-Source Voltage 200 V
Continuous Drain Current (TC=25) 9.8
ID A
Continuous Drain Current (TC=100) 6.2
IDM Drain Current-Pulsed 63 A
VGS Gate-to-Source Voltage