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February 1999

FDC658P
Single P-Channel, Logic Level, PowerTrenchTM MOSFET

General Description Features

This P-Channel Logic Level MOSFET is produced
-4 A, -30 V. RDS(ON) = 0.050 @ VGS = -10 V
using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored RDS(ON) = 0.075 @ VGS = -4.5 V.
to minimize the on-state resistance and yet maintain Low gate charge (8nC typical).
low gate charge for superior switching performance.
High performance trench technology for extremely low
These devices are well suited for notebook computer
RDS(ON).
applications: load switching and power management,
battery charging circuits, and DC/DC conversion. SuperSOTTM-6 package: small footprint (72% smaller than
standard SO-8); low profile (1mm thick).

SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16

S 1 6
D
D 8
.65 2 5

G
D 3 4
TM
pin 1 D
SuperSOT -6

Absolute Maximum Ratings TA = 25