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AO4468
N-Channel Enhancement Mode Field Effect Transistor

General Description Features
The AO4468 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This VDS (V) = 30V
device is suitable for use as a load switch or in ID = 11.6A (V GS = 10V)
PWM applications. The source leads are separated RDS(ON) < 14m (VGS = 10V)
to allow a Kelvin connection to the source, which RDS(ON) < 22m (VGS = 4.5V)
may be used to bypass the source inductance.
Standard Product AO4468 is Pb-free (meets ROHS
& Sony 259 specifications). AO4468L is a Green
Product ordering option. AO4468 and AO4468L are
electrically identical.

D
S D
S D
S D
G D
G
SOIC-8
S

Absolute Maximum Ratings TA=25