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February 1996
NDS9956A
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description Features
These N-Channel enhancement mode power field effect 3.7A, 30V. RDS(ON) = 0.08 @ VGS = 10V
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. This very high density High density cell design for extremely low RDS(ON).
process is especially tailored to minimize on-state resistance,
provide superior switching performance, and withstand high High power and current handling capability in a widely used
energy pulses in the avalanche and commutation modes. surface mount package.
These devices are particularly suited for low voltage Dual MOSFET in surface mount package.
applications such as DC/DC conversion and DC motor
control where fast switching, low in-line power loss, and
resistance to transients are needed.
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5 4
6 3
7 2
8 1
Absolute Maximum Ratings T A= 25