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February 1996
NDS9400A
Single P-Channel Enhancement Mode Field Effect Transistor
General Description Features
These P-Channel enhancement mode power field effect -3.4A, -30V. RDS(ON) = 0.13 @ VGS = -10V.
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is High density cell design for extremely low RDS(ON).
especially tailored to minimize on-state resistance, provide
High power and current handling capability in a widely used
superior switching performance, and withstand high energy
surface mount package.
pulses in the avalanche and commutation modes. These
devices are particularly suited for low voltage applications such Rugged and reliable.
as notebook computer power management and other battery
powered circuits where fast switching, low in-line power loss,
and resistance to transients are needed.
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5 4
6 3
7 2
8 1
Absolute Maximum Ratings T A= 25