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TP0610L/T, VP0610L/T, BS250
Vishay Siliconix
P-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A)
TP0610L -60 10 @ VGS = -10 V -1 to -2.4 -0.18
TP0610T -60 10 @ VGS = -10 V -1 to -2.4 -0.12
VP0610L -60 10 @ VGS = -10 V -1 to -3.5 -0.18
VP0610T -60 10 @ VGS = -10 V -1 to -3.5 -0.12
BS250 -45 14 @ VGS = -10 V -1 to -3.5 -0.18
FEATURES BENEFITS APPLICATIONS
D High-Side Switching D Ease in Driving Switches D Drivers: Relays, Solenoids, Lamps,
D Low On-Resistance: 8 W D Low Offset (Error) Voltage Hammers, Displays, Memories,
D Low Threshold: -1.9 V D Low-Voltage Operation Transistors, etc.
D Fast Switching Speed: 16 ns D High-Speed Switching D Battery Operated Systems
D Low Input Capacitance: 15 pF D Easily Driven Without Buffer D Power Supply, Converter Circuits
D Motor Control
TO-226AA Device Marking TO-92-18RM
(TO-92) Front View (TO-18 Lead Form)
TO-236
TP0610L Device Marking (SOT-23)
S 1 D 1
"S" TP Front View
0610L
xxll BS250 G 1 Marking Code:
G 2 G 2
"S" BS 3 D TP0610T: TOwll
250 VP0610T: VOwll
VP0610L xxll S 2
D 3 S 3 w = Week Code
"S" VP lL = Lot Traceability
"S" = Siliconix Logo
0610L
xxll = Date Code
Top View xxll Top View
Top View
TP0610L BS250 TP0610T
VP0610L "S" = Siliconix Logo VP0610T
xxll = Date Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol TP0610L TP0610T VP0610L VP0610T BS250 Unit
Drain-Source Voltage VDS -60 -60 -60 -60 -45
V
Gate-Source Voltage VGS "30 "30 "30 "30 "25
Continuous Drain Current TA= 25_C -0.18 -0.12 -0.18 -0.12 -0.18
ID
(TJ = 150_C) TA= 100_C -0.11 -0.07 -0.11 -0.07 A
Pulsed Drain Currenta IDM -0.8 -0.4 -0.8 -0.4
TA= 25_C 0.8 0.36 0.8 0.36 0.83
Power Dissipation PD W
TA= 100_C 0.32 0.14 0.32 0.14
Thermal Resistance, Junction-to-Ambient RthJA 156 350 156 350 150 _C/W
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 _C
Notes
a. Pulse width limited by maximum junction temperature.
For applications information see AN804.
Document Number: 70209 www.vishay.com
S-41260--Rev. H, 05-Jul-04 1
TP0610L/T, VP0610L/T, BS250
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
TP0610L/T VP0610L/T BS250
Parameter Symbol Test Conditions Typa Min Max Min Max Min Max Unit
Static
Drain Source
Drain-Source VGS = 0 V, ID = -10 mA -70 -60 -60
V(BR)DSS
Breakdown Voltage VGS = 0 V, ID = -100 mA -45
V
Gate-Threshold
VGS(th) VDS = VGS, ID = -1 mA -1.9 -1 -2.4 -1 -3.5 -1 -3.5
Voltage
VDS = 0 V, VGS = "20 V "10 "10
y
Gate-Body Leakage
g IGSS VDS = 0 V, VGS = "20 V, TJ = 125_C "50 nA
VDS = 0 V, VGS = "15 V "20
VDS = -48 V, VGS = 0 V -1 -1
Zero G
Gate Voltage VDS = -48 V, VGS = 0 V, TJ = 125_C -200 -200
IDSS m
mA
Drain Current
VDS = -25 V, VGS = 0 V -0.5
VDS = -10 V, VGS = -4.5 V -180 -50
On-State Drain
O S L Suffix -750 -600
ID(on) mA
Currentb VDS = -10 V VGS = -10 V
10 V, 10
T Suffix -220
VGS = -4.5 V, ID = -25 mA 11 25
VGS = -10 V, ID = -0.5 A L Suffix 8 10 10
Drain-Source
rDS( )
DS(on) W
On-Resistanceb VGS = -10 V, ID = -0.5 A, TJ = 125_C L Suffix 15 20 20
VGS = -10 V, ID = -0.2 A T Suffix 6.5 10 10 14
VDS = -10 V, ID = -0.5 A L Suffix 20 80
Forward
gf
fs mS
Transconductanceb VDS = -10 V, ID = -0.1 A T Suffix 90 60 70
Diode Forward
VSD IS = -0.5 A, VGS = 0 V -1.1 V
Voltage
Dynamic
Input Capacitance Ciss 15 60 60
Output Capacitance Coss VDS = -25 V, VGS = 0 V 10 25 25
pF
f = 1 MHz
Reverse Transfer
Crss 3 5 5
Capacitance
Switchingc
Turn-On Time tON VDD = -25 V, RL = 133 W
25 8 10
ns
Turn-Off Time tOFF ID ^ -0.18 A, VGEN = -10 V, Rg = 25 W 8 10
Notes
a. For DESIGN AID ONLY, not subject to production testing. VPDS06
b. Pulse test: PW v300 ms duty cycle v2%.
c. Switching time is essentially independent of operating temperature.
www.vishay.com Document Number: 70209
2 S-41260--Rev. H, 05-Jul-04
TP0610L/T, VP0610L/T, BS250
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics Transfer Characteristics
1.0 1200
VGS = 10 V
TJ = -55_C
7V
0.8 8V
900
I D - Drain Current (mA)
I D - Drain Current (A)
25_C
0.6 6V
125_C
600
0.4
5V
300
0.2
4V
0.0 0
0 1 2 3 4 5 0 2 4 6 8 10
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
20 40
VGS = 0 V
VGS = 4.5 V 32
r DS(on) - On-Resistance ( W )
16
Ciss
C - Capacitance (pF)
12 24
VGS = 5 V
8 16
Coss
VGS = 10 V
4 8
Crss
0 0
0 200 400 600 800 1000 0 5 10 15 20 25
ID - Drain Current (mA) VDS - Drain-to-Source Voltage (V)
Gate Charge On-Resistance vs. Junction Temperature
15 1.8
ID = 500 mA
V GS - Gate-to-Source Voltage (V)
12 1.5
VDS = 30 V VGS = 10 V @ 500 mA
VDS = 48 V 1.2
rDS(on) - On-Resiistance
9
VGS = 4.5 V @ 25 mA
(Normalized)
0.9
6
0.6
3
0.3
0 0.0
0.0 0.3 0.6 0.9 1.2 1.5 1.8 -50 -25 0 25 50 75 100 125 150
Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C)
Document Number: 70209 www.vishay.com
S-41260--Rev. H, 05-Jul-04 3
TP0610L/T, VP0610L/T, BS250
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-Source Voltage
1000 10
VGS = 0 V
8 ID = 500 mA
r DS(on) - On-Resistance ( W )
I S - Source Current (A)
100
6
TJ = 125_C
4
10 ID = 200 mA
TJ = 25_C
2
TJ = -55_C
1 0
0.00 0.3 0.6 0.9 1.2 1.5 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Variance Over Temperature Single Pulse Power, Junction-to-Ambient
0.5 3
0.4
ID = 250 mA 2.5
0.3
V GS(th) Variance (V)
2
0.2
Power (W)
0.1 1.5
-0.0
1
TA = 25_C
-0.1
0.5
-0.2
-0.3 0
-50 -25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 600
TJ - Junction Temperature (_C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Duty Cycle = 0.5
Thermal Impedance
0.2
Notes:
0.1
0.1 PDM
0.05
t1
t2
0.02 t1
1. Duty Cycle, D =
t2
2. Per Unit Base = RthJA = 350_C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 70209
4 S-41260--Rev. H, 05-Jul-04
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Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1