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2N60
Surface Mount N-Channel Power MOSFET
P b Lead(Pb)-Free DRAIN CURRENT
2 AMPERES

Description: DRAIN SOURCE VOLTAGE
600 VOLTAGE
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts D-PAK3/(TO-251)
based on half bridge topology.
2 DRAIN

Features: D-PAK/(TO-252)
* 2.0A, 600V,RDS(ON) =5.0 Ohms @VGS =10V
* Low gate charge
1 GATE
* Low Crss
* Fast switching
* Improved dv/dt capability 3
SOURCE TO-220 TO-220F

Maximum Ratings(T A =25 C Unless Otherwise Specified)
Rating Symbol Value Unit
Drain-Source Voltage VDSS 600
V
Gate-Source Voltage VGSS 30
Avalanche Current - (Note 1) I AR 2.0
Continuous Drain Current ID 2.0
A
Pulsed Drain Current, TP Limited by TJMAX - (Note 1) IDM 8.0
Avalanche Energy, Single Pulsed (Note 2) E AS 140 mJ
Avalanche Energy, Repetitive, Limited by TJMAX E AR 4.5 mJ
Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns
Total Power Dissipation 2N60P(TC=25